Type of RAM that reduces power consumption by 99%


Ferroelectric RAM


 Ferroelectric RAM known as FRAM is similar in construction to the storage cell in widely used DRAM in that both cell types include one capacitor and one access transistor. In a DRAM cell capacitor, a linear dielectric is used, whereas in an FRAM cell capacitor the dielectric structure includes ferroelectric material, typically lead zirconate titanate.

 FRAM requires far less power to flip the state of the polarity and does so much faster. Power usage about 99% lower than DRAM

  FRAM makes  use  of  Ferroelectric  film  to  store  the  data. The ferroelectric film  is  polarised  to  a  “0”  or  “1”  state  when  the  voltage  is  applied  and  remains  stable  in  the  state  even  when  the   voltage  is  removed.

Advantages

  • Lower power usage
  • Faster write performance
  • Much larger number of write-erase cycles

Disadvantages


  • Lower storage density
  • Overall capacity limitation
  • Higher cost


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